Localized silicon nanocrystals fabricated by stencil masked low energy ion implantation: effect of the stencil aperture size on the implanted dose

Materials Research Society Symposium Proceedings

Volumn 1160, Issue , 2009, Pages 61-66

  Diaz, R ^a   Dumas, C ^b   Grisolia, J ^a   Ondarcuhu T ^a   Schamm, S ^a   Arbouet, A ^a   Paillard, V ^a   Benassayag, G ^a   Normand, P ^c   Brugger, J ^d  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BLUE SHIFT; CELLS; CYTOLOGY; ELECTROSTATICS; FABRICATION; ION IMPLANTATION; NANOCRYSTALS; PHOTOLUMINESCENCE SPECTROSCOPY; PHOTOMASKS; SILICA; SILICON OXIDES; SWELLING;

ELECTROSTATIC CHARGING; IMPLANTED REGION; LOW ENERGY ION IMPLANTATION; N2 ATMOSPHERES; SI IMPLANTATION; SILICON NANOCRYSTALS; SILICON OXIDE LAYERS; ULTRALOW ENERGY ION IMPLANTATION;

NITROGEN COMPOUNDS;

EID: 77649173145     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1160-h04-05     Document Type: Conference Paper

References (13)

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