Research progress in the resistance switching of transition metal oxides for RRAM application: Switching mechanism and properties optimization

Materials Research Society Symposium Proceedings

Volumn 1160, Issue , 2009, Pages 109-119

  Wang, Qun ^a   Li, Xiaomin ^a   Chen, Lidong ^a   Cao, Xun ^a   Yang, Rui ^a   Yu, Weidong ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; COBALT COMPOUNDS; ELECTRIC RESISTANCE; LANTHANUM COMPOUNDS; MANGANITES; NANOCRYSTALS; NICKEL OXIDE; NONVOLATILE STORAGE; PEROVSKITE; RRAM; SWITCHING; THIN FILMS; TITANIUM DIOXIDE; TRANSITION METAL OXIDES; TRANSITION METALS;

HIGH STORAGE DENSITY; NANOCRYSTALLINE TIO2; PEROVSKITE MANGANITES; PROPERTIES OPTIMIZATIONS; PROPERTY IMPROVEMENT; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; SPACE-CHARGE-LIMITED CURRENT;

MANGANESE COMPOUNDS;

EID: 77649087888     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1160-h10-01     Document Type: Conference Paper

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