High-density matrix-addressable AlInGaN-based 368-nm microarray light-emitting diodes

IEEE Photonics Technology Letters

Volumn 16, Issue 11, 2004, Pages 2421-2423

  Jeon, Chan Wook ^a   Choi, Hoi Wai ^a   Gu, Erdan ^a   Dawson, Martin D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; ULTRAVIOLET RADIATION;

MICROARRAY LIGHT EMITTING DIODES; ULTRAVIOLET LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 7744243123     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.835626     Document Type: Article

References (13)

1. D. Morita, M. Sano, M. Yamamoto, T. Murayama, S. Nagahama, and T. Mukai, "High output power 365 nm ultraviolet light emitting diode of GaN-free structure," [i Jpn. J. Appl. Phys. i], vol. 41, pp. L1434-L1436, 2002.
2. T. Wang, Y. H. Liu, Y. B. Lee, J. P. Ao, J. Bai, and S. Sakai, "1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate," [i Appl. Phys. Lett. i], vol. 81, pp. 2508-2510. 2002.
3. M. Iwaya, S. Takanami, A. Miyazaki, Y. Watanabe, S. Kamiyama, H. Amano, and I. Akasaki, "High-power UV-light-emitting diode on sapphire," [i Jpn. J. Appl. Phys. i], vol. 42, pp. 400-403. 2003.
4. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate anda mesh electrode," [i Jpn. J. Appl. Phys. i], vol. 41, pp. L1431-L1433, 2002.
5. J. P. Zhang, S. Wu, S. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov, and M. A. Khan, "AlGaN multiple-quantum-well based, deep ultraviolet light-emitting diodes with significantly reduced long-wavelength emission," [i Appl. Phys. Lett. i], vol. 83, pp. 3456-3458, 2003.
6. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, "High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well," [i Appl. Phys. Lett. i], vol. 84, pp. 1046-1048, 2004
7. A. J. Fischer, A. A. Allerman, M. H. Crawford, K. H. A. Bogart, S. R. Lee, R. J. Kaplar, W. W. Chow, S. R. Kurtz, K. W. Fullmer, and J. J. Figiel, "Room temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels," [i Appl. Phys. Lett. i], vol. 84, pp. 3394-3396, 2004.
8. C. W. Jeon, H. W. Choi, and M. D. Dawson, "Fabrication of matrix-addressable InGaN-based microdisplays of high array density," [i IEEE Photon. Technol. Lett. i], vol. 15, pp. 1516-1518, Nov. 2003.
9. C. W. Jeon, H. W. Choi, and M. D. Dawson, "A novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED array," [i Phys. Stat. Sol. i] [i (a) i], vol. 200, no. 1, pp. 79-82, 2003.
10. C. W. Jeon, K.-S. Kim, and M. D. Dawson, "Fabrication of 2-dimensional InGaN-based micro-LED arrays," [i Phys. Stat. Sol. i] [i (a) i], vol. 192, no. 2, pp. 325-328, 2002.
11. H. X. Wang, H. D. Li, Y. B. Lee, H. Sato, K. Yamashita, T. Sugahara, and S. Sakai, "Fabrication of high-performance 370 nm ultraviolet light-emitting diodes," [i J. Cryst. Growth i], vol. 264, pp. 48-52, 2004.
12. C. Griffin, E. Gu, H. W. Choi, C. W. Jeon, G. McConnell, J. M. Girkin, and M. D. Dawson, "Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy," [i Appl. Phys. Lett. i], submitted for publication.
13. P. Gueret, P. Buchmann, K. Daetwyler, and P. Vettiger, "Resistance of very small area ohmic contacts on GaAs," [i Appl. Phys. Lett. i], vol. 55, pp. 1735-1737, 1989.