3D determination of a MOSFET gate morphology by FIB tomography

Design and Nature

Volumn 6, Issue , 2004, Pages 611-616

  Inkson, B J ^a   Olsen, S ^b   Norris, D J ^a   O'Neill, A G ^b   Mobus G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM (FIB) TOMOGRAPHY; GATE CONTACTS; GATE LENGTHS; GATE MORPHOLOGY;

CHEMICAL VAPOR DEPOSITION; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; IMAGING TECHNIQUES; MICROSTRUCTURE; MORPHOLOGY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; THERMOOXIDATION; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

MOSFET DEVICES;

EID: 7744233768     PISSN: 14780585     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (11)

1. Dunn D N and Hull R 1999 Appl. Phys. Lett. 75 3414
2. Hutter H, Wilhartitz P and Grasserbauer M 1993 Fres. J. Anal. Chem. 346, 66
3. Inkson B J, Steer T, Möbus G and Wagner T 2001a J. Microsc. 201, 2, 256
4. Inkson B J, Malvihill M and Möbus G 2001b Scripta Mater. 45, 753
5. Kaster A J, Ziese U and Verkleij A J 2000 J. Phys. Chem. B 104, 9368
6. Marsh C, Hetherington C J D, Möbus G and Cockayne D 2002 Proceed. ICEM15, Durban, SA, 1, 55
7. Möbus G and Inkson B J 2001 Appl. Phys. Lett. 79, 1369
8. Patkin A J and Morrison G H 1982 Anal. Chem. 54, 2
9. Sakamoto T, Cheng Z, Takahashi M, Owari M and Nihei Y 1998 Jpn. J. Appl. Phys. 37, 2051
10. Weyland M M, Midgley P A and Thomas J M 2001 J. Phys. Chem. B 105, 7882
11. Wu H, Roberts S G, Möbus G and Inkson B J 2003 Acta Mater. 51, 149