Impact of tungsten capping layer on yttrium silicide for low-resistance n+-source/drain contacts

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Isogai, Tatsunori ^a   Tanaka, Hiroaki ^a   Goto, Tetsuya ^a   Teramoto, Akinobu ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER DIODES; CAPPING LAYER; ELECTRICAL PROPERTY; LOW RESISTANCE; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; N-VALUE; OXYGEN CONTAMINATION; P-TYPE SI; RARE-EARTH METALS; SCHOTTKY BARRIER HEIGHTS; SILICIDATION; SILICIDE FORMATION;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; IMPACT RESISTANCE; ION BEAMS; METAL INSULATOR BOUNDARIES; MIS DEVICES; OXYGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; TUNGSTEN; YTTRIUM; YTTRIUM ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77349109830     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C046     Document Type: Article

References (19)

1. T. Ohmi, A. Teramoto, R. Kuroda, and N. Miyamoto: IEEE Trans. Electron Devices 54 (2007) 1471.
2. R. Kuroda, A. Teramoto, Y. Nakao, T. Suwa, M. Konda, R. Hasebe, X. Li, T. Isogai, H. Tanaka, S. Sugawa, and T. Ohmi: Jpn. J. Appl. Phys. 48 (2009) 04C048.
3. C. Weitao, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi: Jpn. J. Appl. Phys. 45 (2006) 3110.
4. J. M. Larson and J. P. Snyder: IEEE Trans. Electron. Devices 53 (2006) 1048.
5. H. Tanaka: Dr. Thesis, Graduate School of Engineering, Tohoku University.
6. I. Ohdomari, T. S. Kuan, and K. N. Tu: J. Appl. Phys. 50 (1979) 7020.
7. W. Huang, G. P. Ru, C. Detavernier, R. L. Van Meirhaeghe, Y. L. Jiang, X. P. Qu, and B. Z. Li: Microelectron. Eng. 85 (2008) 131.
8. W. Huang, G. P. Ru, Y. L. Jiang, X. P. Qu, B. Z. Li, and R. Liu: Thin Solid Films 516 (2008) 4252.
9. E. J. Tan, M. L. Kon, K. L. Pey, P. S. Lee, Y. W. Zhang, W. D. Wang, and D. Z. Chi: Thin Solid Films 504 (2006) 157.
10. S. Zhu, H. Y. Yu, J. D. Chen, S. J. Whang, J. H. Chen, C. Shen, C. Zhu, S. J. Lee, M. F. Li, D. S. H. Chan, W. J. Yoo, A. Du, C. H. Tung, J. Singh, A. Chin, and D. L. Kwong: Solid-State Electron. 48 (2004) 1987.
11. S. Zhu, J. Chen, M.-F. Li, S. J. Lee, J. Singh, C. X. Zhu, A. Du, C. H. Tung, A. Chin, and D. L. Kwong: IEEE Electron Device Lett. 25 (2004) 565.
12. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed.
13. K. N. Tu, R. D. Thompson, and B. Y. Tsaur: Appl. Phys. Lett. 38 (1981) 626.
14. Y. Tsuchiya, T. Irisawa, A. Yagishita, and J. Koga: Ext. Abstr. 5th Int. Workshop Junction Technology, 2005, p. 93.
15. T. Isogai, H. Tanaka, T. Goto, A. Teramoto, S. Sugawa, and T. Ohmi: Jpn. J. Appl. Phys. 47 (2008) 3138.
16. T. Ohmi: J. Electrochem. Soc. 143 (1996) 2957.
17. M. Gurvitch, A. F. J. Levi, R. T. Tung, and S. Nakahara: Appl. Phys. Lett. 51 (1987) 311.
18. D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, New York, 2006) 3rd ed.
19. T. Ohmi, M. Hirayama, and A. Teramoto: J. Phys. D 39 (2006) R1.