Yttrium silicide formation and its contact properties on Si(1 0 0)

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 131-135

  Huang, Wei ^a,b   Ru, Guo Ping ^a   Detavernier, C ^b   Van Meirhaeghe, R L ^b   Jiang, Yu Long ^a   Qu, Xin Ping ^a   Li, Bing Zong ^a  

^a FUDAN UNIVERSITY   (China)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

I V T; RTA; Schottky barrier; Yttrium silicide

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; SCHOTTKY BARRIER DIODES; WAFER BONDING;

ANNEALING TEMPERATURE; CONTACT PROPERTIES; CURRENT-VOLTAGE MEASUREMENT; PINHOLES FORMATIONS;

YTTRIUM COMPOUNDS;

EID: 36148973529     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.144     Document Type: Article

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