Improvement of Er-silicide formation on Si(100) by W capping

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 4252-4257

  Huang, W ^a   Ru, G P ^a   Jiang, Y L ^a   Qu, X P ^a   Li, B Z ^a   Liu, R ^a  

^a ASIC and System   (China)

Author keywords

Current voltage; Er silicide; Salicide; Schottky barrier; W capping

Indexed keywords

CRYSTAL DEFECTS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

ER-SILICIDE; PYRAMIDAL DEFECT; W CAPPING;

SILICIDES;

EID: 40849099950     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.154     Document Type: Article

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