Formation of atomically flat interface and effect of silicidation condition on Schottky contact characteristics in ErSi1.7/Si(100) system

Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005

Volumn 2005, Issue , 2005, Pages 93-94

  Tsuchiya, Yoshinori ^a   Irisawa, Toshifumi ^a   Yagishita, Atsushi ^b   Koga, Junji ^a  

^a Advanced LSI Technology Laboratory   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847306947     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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4. H. Sato et al., Jpn. J. Appl. Phys. 43, (2004) 6038.
5. Y. Tsuchiya et al., Jpn. J. Appl. Phys. 41, (2002) 2450.
6. W.C. Tsai et al., J.Electro. Mater. 32, (2003) 1166.