Fabrication and characterization of 1.3-μm InAs quantum-dot VCSELs and monolithic VCSEL arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7631, Issue , 2009, Pages

  Ding, Y ^a   Fan, W J ^a   Xu, D W ^a   Zhao, L J ^b   Liu, Y ^b   Zhu, N H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Array; Far field; Modulation bandwidth; Output power; Quantum dot (QD); Threshold current; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

FAR FIELD; OUTPUT POWER; QUANTUM DOTS; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASER;

BANDWIDTH; FREQUENCY RESPONSE; LASER PULSES; MODULATION; OPTOELECTRONIC DEVICES; QUANTUM DOT LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SURFACES; TWO DIMENSIONAL;

SURFACE EMITTING LASERS;

EID: 77049124562     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.852114     Document Type: Conference Paper

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