High resolution patterning - Preparation of VSB systems for 22 nm node capability

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1077-1081

  Hahmann, Peter ^a   Boettcher, Monika ^a   Klein, Matthias W ^a   Stolberg, Ines A ^a   Weidenmueller, Ulf ^a  

^a Vistec Electron Beam GmbH   (Germany)

Author keywords

100 keV; 22 nm half pitch; 50 keV; EBDW; Electron beam direct write; Resolution; Variable shaped beam; VSB

Indexed keywords

CHEMICALLY AMPLIFIED RESIST; DIRECT WRITE; FINE PATTERN; HIGH-RESOLUTION PATTERNING; MICROELECTRONIC TECHNOLOGIES; MINIMUM FEATURE SIZES; NEGATIVE TONE RESIST; OPTICAL SIMULATION; RESOLUTION CAPABILITY; RESOLVING POWER; SECTIONAL VIEWS; SEM IMAGE; TEST PATTERN; TOPDOWN; VARIABLE SHAPED BEAMS;

ELECTRIC LOAD FORECASTING; ELECTRON ENERGY LEVELS; ELECTRONS; MICROELECTRONICS; PHOTORESISTORS; PHOTORESISTS;

ELECTRON BEAM LITHOGRAPHY;

EID: 76949108586     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.065     Document Type: Article

References (13)

1. Hahmann P., Bettin L., Boettcher M., Denker U., et al. Microelectron. Eng. 84/5-8 (2007) 774-778
2. ITRS Roadmap: .
3. Pain L., Jurdit M., Laplanche Y., Todeschini J., et al. J. Vac. Sci. Technol. B 43 (2004)
4. Alves H., Hahmann P., Frase C.G., Kliem K.-H., et al. Proc. SPIE 6921 (2008) 6921-6991
5. Alves H., Hahmann P., Slodowski M., Frase C.G., et al. Proc. SPIE 7271 (2009) 72712O
6. Hoyle P.C., and Laidler I. Mater. Res. Soc. Symp. Proc. 961 (2007)
7. Leunissen L.H.A., Jonckheere R., Ronse K., and Derksen G.B. J. Vac. Sci. Technol. B 21 (2003) 3140-3143
8. Morosawa T., Saito K., and Takeda Y. J. Vac. Sci. Technol. B 17 (1999) 2907
9. Pfeiffer H.C., Davis D.E., Enichen W.A., Gordon M.S., et al. J. Vac. Sci. Technol. B 11 (1993) 2332-2341
10. Joel K., Yang W., and Karl K. J. Vac. Sci. Technol. B 25 6 (2007) 2025-2029
11. Bossung J.W. Proc. SPIE 100 (1977) 80
12. Keil K., Choi K.-H., Hohle C.K., Kretz J., et al. Microelectron. Eng. 85 (2007) 778-781
13. Hudek P., and Beyer D. Microelectron. Eng. 83 (2006) 780-783