Recent development in a high-speed silicon optical modulator based on reverse-biased pn diode in a silicon waveguide

Semiconductor Science and Technology

Volumn 23, Issue 6, 2008, Pages

  Liu, Ansheng ^a   Liao, Ling ^a   Rubin, Doron ^b   Basak, Juthika ^a   Chetrit, Yoel ^b   Nguyen, Hat ^a   Cohen, Rami ^b   Izhaky, Nahum ^b   Paniccia, Mario ^a  

^a INTEL CORPORATION   (United States)

^b INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ARCHITECTURAL DESIGN; COBALT; COBALT COMPOUNDS; ELECTROACUPUNCTURE; FREQUENCY RESPONSE; LIGHT MODULATION; MICROFLUIDICS; MODULATION; MODULATORS; NANOSTRUCTURED MATERIALS; NONMETALS; OPTICAL DESIGN; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SILICON; THICKNESS MEASUREMENT; WAVEGUIDES;

(100) SILICON; (HI-BI) WAVEGUIDE; CARRIER DEPLETION; CIRCUIT MODELING; DATA TRANSMISSIONS; DEVICE DESIGNS; HIGH SPEEDS; HIGH-FREQUENCY (HF); OPTICAL (PET) (OPET); OPTICAL MODULATOR; OPTICAL RESPONSES; OPTICAL SIGNALLING; P N DIODES; P N JUNCTIONS; PHOTONIC; RECENT DEVELOPMENT; REVERSE-BIASED; SEMICONDUCTOR DEVICE MODELLING; SILICON WAVEGUIDES; SILICON-ON-INSULATOR (SOI) WAVEGUIDES; SUB MICROMETERS; TRAVELING WAVES;

LIGHT MODULATORS;

EID: 45749085252     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/6/064001     Document Type: Article

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