Physical mechanism of p-i-n-diode-based photonic crystal silicon electrooptic modulators for gigahertz operation

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1132-1139

  Gu, Lanlan ^a   Jiang, Wei ^b   Chen, Xiaonan ^c   Chen, Ray T ^c  

^a Omega Optics Inc   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

Optical modulation; Photonic bandgap materials; Silicon

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CURRENT DENSITY; DIODES; ELECTROOPTICAL DEVICES; LASER OPTICS; LIGHT MODULATION; MECHANISMS; MODULATION; MODULATORS; NONMETALS; OPTICAL WAVEGUIDES; PHOTONIC CRYSTALS; POWDERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SILICON; SILICON ON INSULATOR TECHNOLOGY; SPEED;

DEVICE SIMULATORS; DEVICE SIZES; ELECTRICAL SIMULATIONS; ELECTRO-OPTIC MODULATORS; HIGH SPEEDS; MACH-ZEHNDER; MODULATION SPEED; OPTICAL MODULATION; OPTICAL SIMULATIONS; PC-BASED; PHOTONIC BANDGAP MATERIALS; PHOTONIC CRYSTAL (PC); PHOTONIC CRYSTAL WAVEGUIDES; PHYSICAL MECHANISMS; SIGNIFICANT REDUCTION; SILICON MODULATORS; SLOW GROUP VELOCITY; SPEED LIMITATION; TRANSIENT BEHAVIORS;

LIGHT MODULATORS;

EID: 48949102125     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.925769     Document Type: Article

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