High speed hybrid silicon evanescent electroabsorption modulator

Optics Express

Volumn 16, Issue 13, 2008, Pages 9936-9941

  Kuo, Ying Hao ^a   Chen, Hui Wen ^a   Bowers, John E ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROABSORPTION MODULATORS; LIGHT ABSORPTION;

10 GB/ S; ALGAINAS; EXTINCTION RATIOS; HIGH SPEED; HIGH-SPEED MODULATOR; HYBRID SILICON; MODULATION BANDWIDTH; SI-WAVEGUIDE;

MODULATORS;

SILICON;

ARTICLE; CHEMISTRY; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; OPTICS; RADIATION EXPOSURE; RADIATION SCATTERING; SIGNAL PROCESSING; TELECOMMUNICATION; THEORETICAL MODEL;

COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; MODELS, THEORETICAL; OPTICS; SCATTERING, RADIATION; SIGNAL PROCESSING, COMPUTER-ASSISTED; SILICON; TELECOMMUNICATIONS;

EID: 46149091984     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.009936     Document Type: Article

References (13)

1. A. S. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, "A high-speed silicon optical modulator based on a metal-oxide semiconductor capacitor," Nature 427, 615-618 (2004).
2. D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, S. Laval, J. M. Fedeli, and J. F. Damlencourt, "Optical modulation by carrier depletion in a silicon PIN diode," Opt. Express 14, 10838-10843 (2006).
3. Y. Q. Jiang, W. Jiang, L. L. Gu, X. N. Chen, and R. T. Chen, "80-micron interaction length silicon photonic crystal waveguide modulator," Appl. Phys. Lett. 87, 221105-1-3 (2005).
4. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometre-scale silicon, electrooptic modulator," Nature 435, 325-327 (2005).
5. R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Page-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, "Strained silicon as a new electro-optical material," Nature 441, 199-202 (2006).
6. J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, Jr., and D. A. B. Miller, "Optical modulator on silicon, employing germanium quantum wells," Opt. Express 15, 5851-5859 (2007).
7. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent, laser," Opt. Express 14, 9203-9210 (2006).
8. H. Park, Y.-h. Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector," Opt. Express 15, 13539-13546 (2007).
9. J. Raring, E. Skogen, L. Johansson, M. N. Sysak, J. Barton, M. L. Mašanović, L. Coldren, "Demonstration of Widely-Tunable Single-Chip 10 Gb/s Laser-Modulators Using Multiple-Bandgap InGaAsP Quantum-Well Intermixing," IEEE Photon. Technol. Lett. 16, 1613-1615 (2004).
10. J. Shimizu, M. Aoki, T.Tsuchiya, M. Shirai, A. Taike, T. Ohtoshi, and S. Tsuji, "Advantages of optical modulators with InGaAlAs / InGaAlAs MQW structure," Electron. Lett. 38, 821-822 (2002).
11. H. Fukano, T. Yamanaka, M. Tamura, and Y. Kondo, "Very-low-driving- voltage electroabsorption modulators operating at 40Gb/s," IEEE J. Lightwave Technol. 24, 2219-2224 (2006).
12. K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma, and M. Yaita, "110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μm wavelength," IEEE Photon. Technol. Lett. 6, 719-721 (1994).
13. D. Liang, E. A. Lucero, and J. E. Bowers, "Highly efficient vertical outgassing channels for robust, void-free, low-temperature direct wafer bonding," The 35th Conference on the Physics and Chemistry of Semiconductor Interfaces, Santa Fe, NM, Jan. 2008.