Free carrier lifetime modification for silicon waveguide based devices

Optics Express

Volumn 16, Issue 24, 2008, Pages 19779-19784

  Wright, N M ^a   Thomson, D J ^a   Litvinenko, K L ^a   Headley, W R ^a   Smith, A J ^a   Knights, A P ^b   Deane, J H B ^a   Gardes, F Y ^a   Mashanovich, G Z ^a   Gwilliam, R ^a   Reed, G T ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; ION BOMBARDMENT; ION IMPLANTATION; IONS; IRRADIATION; LIGHT ABSORPTION; LUMINESCENCE OF ORGANIC SOLIDS; SILICON; TWO PHOTON PROCESSES; WAVEGUIDES;

FREE CARRIERS; IMPLANTED IONS; INTEGRATED DIODES; IRRADIATION ENERGY; REVERSE BIAS; SILICON ION IMPLANTATION; SILICON WAVEGUIDE; TWO PHOTON ABSORPTION;

CARRIER LIFETIME;

EID: 57249090678     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.019779     Document Type: Article

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