Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer

Electrochemical and Solid-State Letters

Volumn 13, Issue 4, 2010, Pages

  Hsueh, H T ^a   Hsueh, T J ^c   Chang, S J ^a,b   Hung, F Y ^a   Hsu, C L ^d   Weng, W Y ^b   Liu, C W ^c   Lee, Y H ^c   Dai, B T ^c  

^a Center for Micro/Nano Science and Technology   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c National Nano Devices Laboratories   (Taiwan)

^d NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; FIELD EMITTER; FIELD ENHANCEMENT FACTOR; GLASS SUBSTRATES; HIGH DENSITY; SELECTIVE GROWTH; SI NANOPARTICLES; SILICON NANOWIRES; THRESHOLD FIELDS; ULTRA-THIN; VAPOR-LIQUID-SOLID PROCESS;

FABRICATION; GOLD; NANOWIRES;

SILICON;

EID: 76749124966     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3290776     Document Type: Article

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