Silicon field emitter cathodes: Fabrication, performance, and applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1980-1990

  Temple, D ^a   Palmer, W D ^a   Yadon, L N ^a   Mancusi, J E ^a   Vellenga, D ^a   McGuire, G E ^a  

^a MCNC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE GAS; DEVICE PERFORMANCE; ELECTRICAL PERFORMANCE; EMISSION CURRENT; EXPERIMENTAL DATA; FABRICATION PROCESS; FIELD EMITTER ARRAYS; GATE VOLTAGES; GEOMETRICAL PARAMETERS; ISOTROPIC ETCHING; MICROWAVE POWER AMPLIFIER; SILICON FIELD EMITTERS; SILICON TIPS; STABILITY OF EMISSION; ULTRAHIGH VACUUM CONDITIONS; VACUUM MICROELECTRONIC DEVICES;

FABRICATION; FIELD EMISSION; FIELD EMISSION CATHODES; FLAT PANEL DISPLAYS; MICROELECTRONICS; MICROWAVE AMPLIFIERS; POWER AMPLIFIERS; VACUUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 0000884476     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581207     Document Type: Article

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