Room temperature 1.3 μm emission from self-assembled GaSb/GaAs quantum dots

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 771-776

  Farrer, I ^a   Murphy, M J ^a   Ritchie, D A ^a   Shields, A J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds; B3. Infrared devices

Indexed keywords

CRYSTAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

LOW DIMENSIONAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037381963     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02398-9     Document Type: Conference Paper

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