Pulsed-pressure MOCVD processing investigation for TiO2 films on Si3N4 substrate from TTIP

ECS Transactions

Volumn 25, Issue 8 PART 2, 2009, Pages 987-990

  Siriwongrungson, V ^a   Krumdieck, S P ^a   Alkaisi, M M ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ANATASE PHASE; BASE PRESSURE; COLUMNAR GROWTH; DEPOSITED FILMS; DEPOSITION TEMPERATURES; GRAIN SIZE; INJECTION VOLUME; ISO-PROPOXIDE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; PRECURSOR CONCENTRATION; PROCESSING PARAMETERS; SEM; TIO; XRD;

DISSOLUTION; GRAIN SIZE AND SHAPE; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SURFACE ROUGHNESS; TITANIUM; TITANIUM DIOXIDE; TOLUENE;

CHEMICAL VAPOR DEPOSITION;

EID: 76549126409     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3207696     Document Type: Conference Paper

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