Small signal response of inversion layers in high mobility in 0.53Ga0.47As MOSFETs made with thin high-κ dielectrics

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 271-284

  Ali, A ^a   Madan, H ^a   Koveshnikov, S ^b   Datta, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; EQUIVALENT CIRCUITS; GALLIUM COMPOUNDS; GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH-K DIELECTRIC; INVERSION LAYERS; QUANTUM CHEMISTRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

COMPOUND SEMICONDUCTORS; EFFECTIVE CHANNEL MOBILITIES; EQUIVALENT CIRCUIT MODEL; OPTICAL PHONON SCATTERING; REMOTE COULOMB SCATTERINGS; SCATTERING MECHANISMS; SMALL-SIGNAL RESPONSE; TEMPERATURE-DEPENDENT MEASUREMENTS;

MOSFET DEVICES;

EID: 76549105205     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206626     Document Type: Conference Paper

References (13)

1. R. Chau, B. Doyle, S. Datta, K. Kavalieros and K. Zhang, Nature Materials, vol 6, pp. 810-812(2007).
2. S. Datta, G. Dewey, J. M. Fastenau, M. K. Hudait, et. al., IEEE Electron Device Letters, vol. 28, no. 8, pp. 685 (2007).
3. A. Ali et. al., Device Research Conference (2009).
4. J. Rhew, M. Lundstrom, J. Appl. Phys., vol. 92, no. 9 (2002)
5. J. Robertson, Journal of Microelectronic Engineering, vol 86, pp 1558-1560 (2009).
6. E.P. O'Reilly, J. Robertson, Phys. Rev. B 34 (1984) 8684
7. Y. Xuan, P. D. Ye, and T. Shen, Appl. Phys. Lett. 91, 232107 (2007).
8. S. Koveshnikov, N. Goel, P. Majhi, C. K. Gaspe et. al., 66th Device Research Conf. Digest, pp 43-44 (2008).
9. S. Koveshnikov, S. Oktyabrsky, D. Schlom, V. Tokranov et. al. Appl. Phys. Lett. 93 (2008).
10. C. Hinkle et. al., IEEE Electron Device Letters, vol. 30, no. 4, pp. 316 (2009).
11. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, New York: Wiley, 1982.
12. K. Martens et. al., IEEE Trans. Electron Dev. 55, pp. 547-556 (2008).
13. O. Weber et. al., Solid-State Electronics, 50 626-631(2006).