Effect of ingredients in slurry containing alumina on chemical mechanical polishing of hard disc substrates

Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology

Volumn 223, Issue 7, 2009, Pages 1003-1011

  Sun, J Z ^a   Pan, G S ^a   Zhou, Y ^a   Zhu, Y H ^a   Luo, J B ^a   Lu, X C ^a   Liu, Y ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Alumina; Chemical mechanical polishing; Cold weld; Hard disc substrate; Slurry

Indexed keywords

ALUMINA ABRASIVE; COLD WELD; ELECTRONIC MICROSCOPES; FORMATION MECHANISM; HARD DISC; HARD DISC SUBSTRATE; MATERIAL REMOVAL RATE; MEAN PARTICLE DIAMETER; PH VALUE; SURFACE MODIFIERS; SURFACE QUALITIES; X RAY DIFFRACTOMETERS;

ABRASIVES; BALL MILLING; BALL MILLS; CHEMICAL MECHANICAL POLISHING; COLD WELDING; HYDROGEN PEROXIDE; OXIDANTS; POLISHING; SUBSTRATES; SURFACES; WELDING; WELDS;

CHEMICAL POLISHING;

EID: 76549086156     PISSN: 13506501     EISSN: None     Source Type: Journal    
DOI: 10.1243/13506501JET591     Document Type: Conference Paper

References (17)

1. Moser, A., Bonhote, C., and Dai, Q. Perpendicular magnetic recording technology at 230 Gbit/in2. J. Magn. Magn.Mater., 2006, 303, 271-275.
2. Ali, I. Chemical-mechanical polishing of interlayer dielectric: a review. Solid State Technol., 1994, 34, 63-70.
3. Farid, M. and Masood, H.Manufacturability of the CMP process. Thin Solid Films, 1995, 270, 612-615.
4. Steigerwald, J. M., Shyam, P., Gutmann, M., and Gutmann, R. J. Chemical mechanical planarization of microelectronic materials, 1997 (Wiley, New York).
5. Lei, H., Lu, H. S., Luo, J. B., and Lu, X. C. Preparation of ?-alumina-g-polyacrylamide composite abrasive and chemical mechanical polishing behavior. Thin Solid Films, 2008, 516, 3005-3008.
6. Lei, H. and Zhang, P. Z. Preparation of alumina/silica core-shell abrasives and their CMP behavior. Appl. Surf. Sci., 2007, 253, 8754-8761.
7. Sun, J. Z., Pan, G. S., and Zhu, Y. H. Influence of slurry ingredients as particle on hard disk substrate polishing (in Chinese). Lubr. Eng., 2007, 11, 1-4.
8. Shigeo,F. andHiroaki, K. Substrate for magnetic disk. US Patent 10/899,065, 2005.
9. Toshiya, H., Shigeo, F., and Yoshiaki,O. Roll-off reducing agent. US Patent 11/625,097, 2007.
10. Chandra, A., Karra, P., and Bastawros, A. F. Prediction of scratch generation in chemical mechanical planarization. Manuf. Technol., 2008, 57, 559-562.
11. Basim, G. B., Vakarelski, I. U., and Moudgil, B. M. Role of interaction forces in controlling the stability and polishing performance of CMP slurries. J. Colloid Interface Sci., 2003, 263, 506-515.
12. Bielmann, M., Mahajan, U., and Singh, R. K. Effect of particle size during tungsten chemical mechanical polishing. Electrochem. Solid-State Lett., 1999, 2, 401-403.
13. Xu, R., Smart, G., and Zheng, M. Particle characteristic and removal rate in CMP process. In Proceedings of the Fourth International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, Santa Clara, CA, 1999, pp. 253-255.
14. Fu, G., Chandre, A., Guha, S., and Subhash, G. A plasticity-based model of material removal in chemical-mechanical polishing (CMP). IEEE Trans. Semicond.Manuf., 2001, 14(4), 406-417.
15. Luo, J. and Dornfeld,D. A. Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification. IEEE Trans. Semicond. Manuf., 2003, 16(3), 469-476.
16. Jeng, Y. R. and Huang, P. Y. Impact of abrasive particles on the material removal rate in CMP. Electrochem. Solid-State Lett., 2004, 7(2), G40-G43.
17. Jeng,Y.R. andHuang,P.Y. A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing. ASME J. Tribol., 2005, 127(1), 190-197.