Crystalline silicon nitride thin films grown by pulsed YAG laser deposition

Nanostructured Materials

Volumn 12, Issue 1, 1999, Pages 391-394

  Suda, Y ^a   Ebihara, K ^b   Baba, K ^c   Abe, H ^d   Grishin, A M ^e  

^a SASEBO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b KUMAMOTO UNIVERSITY   (Japan)

^c Technology Center of Nagasaki   (Japan)

^d Ceramic Research Center of Nagasaki   (Japan)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER ABLATION; NEODYMIUM LASERS; SEMICONDUCTING SILICON; SILICON NITRIDE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FIELD EMISSION SECONDARY ELECTRON MICROSCOPY; GLANCING ANGLE X RAY DIFFRACTION; PULSED LASER DEPOSITION;

CRYSTALLINE MATERIALS;

EID: 0032593412     PISSN: 09659773     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0965-9773(99)00142-7     Document Type: Article

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