Atomic scale simulation of physical sputtering of silicon oxide and silicon nitride thin films

Journal of Crystal Growth

Volumn 286, Issue 1, 2006, Pages 71-77

  Kim, Dong Ho ^a   Lee, Gun Hwan ^a   Lee, Seung Yup ^b   Kim, Do Hyun ^b  

^a Korea Institute of Machine and Materials   (South Korea)

^b Department of Chemical and Biomolecular Engineering ^*  (South Korea)

Author keywords

A1. Ion bombardment; A1. Molecular dynamics simulation; A3. Sputtering; B1. Silicon nitride; B1. Silicon oxide

Indexed keywords

ARGON; COMPUTER SIMULATION; ION BOMBARDMENT; MOLECULAR DYNAMICS; POSITIVE IONS; SILICON COMPOUNDS; SILICON NITRIDE;

ATOMIC SCALE SIMULATION; MOLECULAR DYNAMICS SIMULATION; PHYSICAL SPUTTERING PROCESS; SILICON OXIDE;

THIN FILMS;

EID: 28244443302     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.045     Document Type: Article

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