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Journal of the Electrochemical Society

Volumn 157, Issue 3, 2010, Pages

Temperature-dependent characteristics of a GaN/InGaN/ZnO heterojunction bipolar transistor

(6) Hsueh, Kuang Po a Pan, Chun Ting b Li, Ching Tai b Lin, Hung Cheng b Hsin, Yue Ming b Chyi, Jen Inn b

a VANUNG UNIVERSITY (Taiwan)

b NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR CURRENTS; COMMON EMITTER; CURRENT GAINS; DC CHARACTERISTICS; GAN LAYERS; GUMMEL PLOTS; INJECTION EFFICIENCY; P-INGAN; RECOMBINATION CURRENTS; TEMPERATURE DEPENDENT; ZNO FILMS;

BIPOLAR TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLICS; PLASMA ETCHING; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE; CURRENT VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 76349122716 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3294765 Document Type: Article

Times cited : (8)

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