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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1922-1924

Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors

(3) Makimoto, Toshiki a Kumakura, Kazuhide a Kobayashi, Naoki b

a NTT Basic Research Laboratories (Japan)

b UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

Author keywords

Contact resistance; Current gain; Diode; Extrinsic base; HBT; MOVPE; Offset voltage; Ohmic contact; P InGaN; Regrowth

Indexed keywords

DIODES; DRY ETCHING; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS;

CONTACT RESISTANCE; CURRENT GAIN; EXTRINSIC BASE; OFFSET VOLTAGE; P-INGAN; REGROWTH;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3142649376 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.1922 Document Type: Conference Paper

Times cited : (23)

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