SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 157, Issue 3, 2010, Pages

Improvement in thermal stability of nickel silicides using NiNx films

(4) Kim, Sun Il a Lee, Seung Ryul a Ahn, Kyung Min a Ahn, Byung Tae a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL ANNEALING; AMORPHOUS SI; FLOW RATIOS; FORMATION TEMPERATURE; NI DIFFUSION; NI FILMS; NICKEL SILICIDE; NISI LAYERS; NITROGEN CONTENT; SI SUBSTRATES; SILICIDATION; THERMAL STABILITY;

AGGLOMERATION; AMORPHOUS SILICON; ELECTRIC RESISTANCE; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; NITRIDES; SILICIDES; THERMODYNAMIC STABILITY; AMORPHOUS FILMS; SILICON; STABILITY;

AMORPHOUS FILMS; INTERFACES (MATERIALS);

EID: 76349115164 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3272541 Document Type: Article

Times cited : (8)

References (14)

1
- 0001188981
- JAPIAU 0021-8979, 10.1063/1.365410
- F. Deng, R. A. Johnson, P. M. Asbeck, S. S. Lau, W. B. Dubbelday, T. Hsiao, and J. Woo, J. Appl. Phys. JAPIAU 0021-8979, 81, 8047 (1997). 10.1063/1.365410
- (1997) J. Appl. Phys. , vol.81 , pp. 8047
- Deng, F.¹ Johnson, R.A.² Asbeck, P.M.³ Lau, S.S.⁴ Dubbelday, W.B.⁵ Hsiao, T.⁶ Woo, J.⁷

2
- 0029488445
- THSFAP 0040-6090, 10.1016/0040-6090(95)06936-4
- R. Mukai, S. Ozawa, and H. Yagi, Thin Solid Films THSFAP 0040-6090, 270, 567 (1995). 10.1016/0040-6090(95)06936-4
- (1995) Thin Solid Films , vol.270 , pp. 567
- Mukai, R.¹ Ozawa, S.² Yagi, H.³

3
- 0036478458
- JAPLD8 0021-4922, 10.1143/JJAP.41.L124
- T. S. Chao and L. Y. Lee, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922, 41, L124 (2002). 10.1143/JJAP.41.L124
- (2002) Jpn. J. Appl. Phys., Part 2 , vol.41 , pp. 124
- Chao, T.S.¹ Lee, L.Y.²

4
- 0035519420
- Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies
- DOI 10.1116/1.1409389, 45th International COnference on Electron, Ion, and Photon Beam Technology and Nanofabrication
- A. Lauwers, A. Steegen, M. de Potter, R. Lindsay, A. Satta, H. Bender, and K. Maex, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 19, 2026 (2001). 10.1116/1.1409389 (Pubitemid 34089694)
- (2001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.19 , Issue.6 , pp. 2026-2037
- Lauwers, A.¹ Steegen, A.² De Potter, M.³ Lindsay, R.⁴ Satta, A.⁵ Bender, H.⁶ Maex, K.⁷

5
- 0001390971
- APPLAB 0003-6951, 10.1063/1.1313815
- J. F. Liu, H. B. Chen, J. Y. Feng, and J. Zhu, Appl. Phys. Lett. APPLAB 0003-6951, 77, 2177 (2000). 10.1063/1.1313815
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2177
- Liu, J.F.¹ Chen, H.B.² Feng, J.Y.³ Zhu, J.⁴

6
- 4944244328
- JESOAN 0013-4651, 10.1149/1.1782634
- R. T. P. Lee, D. Z. Chi, M. Y. Lai, N. L. Yakovlev, and S. J. Chua, J. Electrochem. Soc. JESOAN 0013-4651, 151, G642 (2004). 10.1149/1.1782634
- (2004) J. Electrochem. Soc. , vol.151 , pp. 642
- Lee, R.T.P.¹ Chi, D.Z.² Lai, M.Y.³ Yakovlev, N.L.⁴ Chua, S.J.⁵

7
- 32044442936
- The improvement of thermal stability of nickel silicide by adding a thin Zr interlayer
- DOI 10.1016/j.mee.2005.10.001, PII S0167931705004594
- W. Huang, L. Zhang, Y. Gao, and H. JMicroelectron. Eng. MIENEF 0167-9317, 83, 345 (2006). 10.1016/j.mee.2005.10.001 (Pubitemid 43199298)
- (2006) Microelectronic Engineering , vol.83 , Issue.2 , pp. 345-350
- Huang, W.¹ Zhang, L.-C.² Gao, Y.-Z.³ Jin, H.-Y.⁴

8
- 34547545538
- Thickness effect of a Ge interlayer on the formation of nickel silicides
- DOI 10.1149/1.2749099
- C. -J. Choi, S. -Y. Chang, S. -J. Lee, Y. -W. Ok, and T. -Y. Seong, J. Electrochem. Soc. JESOAN 0013-4651, 154, H759 (2007). 10.1149/1.2749099 (Pubitemid 47186577)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.9
- Choi, C.-J.¹ Chang, S.-Y.² Lee, S.-J.³ Ok, Y.-W.⁴ Seong, T.-Y.⁵

9
- 0008977533
- APPLAB 0003-6951, 10.1063/1.92259
- L. Wieluński, D. M. Scott, M. -A. Nicolet, and H. von Seefeld, Appl. Phys. Lett. APPLAB 0003-6951, 38, 106 (1981). 10.1063/1.92259
- (1981) Appl. Phys. Lett. , vol.38 , pp. 106
- Wieluński, L.¹ Scott, D.M.² Nicolet, M.-A.³ Von Seefeld, H.⁴

10
- 0023400579
- JMTSAS 0022-2461, 10.1007/BF01086464
- K. Oda, T. Yoshio, and K. Oda, J. Mater. Sci. JMTSAS 0022-2461, 22, 2729 (1987). 10.1007/BF01086464
- (1987) J. Mater. Sci. , vol.22 , pp. 2729
- Oda, K.¹ Yoshio, T.² Oda, K.³

11
- 33645689903
- JESOAN 0013-4651, 10.1149/1.2184927
- S. I. Kim, S. R. Lee, J. H. Park, and B. T. Ahn, J. Electrochem. Soc. JESOAN 0013-4651, 153, G506 (2006). 10.1149/1.2184927
- (2006) J. Electrochem. Soc. , vol.153 , pp. 506
- Kim, S.I.¹ Lee, S.R.² Park, J.H.³ Ahn, B.T.⁴

12
- 0005251181
- JAPIAU 0021-8979, 10.1063/1.346741
- P. Ruterana, P. Houdy, and P. Boher, J. Appl. Phys. JAPIAU 0021-8979, 68, 1033 (1990). 10.1063/1.346741
- (1990) J. Appl. Phys. , vol.68 , pp. 1033
- Ruterana, P.¹ Houdy, P.² Boher, P.³

13
- 27744507306
- ESLEF6 1099-0062, 10.1149/1.2073675
- S. I. Kim, S. R. Lee, J. H. Park, and B. T. Ahn, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 8, G324 (2005). 10.1149/1.2073675
- (2005) Electrochem. Solid-State Lett. , vol.8 , pp. 324
- Kim, S.I.¹ Lee, S.R.² Park, J.H.³ Ahn, B.T.⁴

14
- 0344089309
- APPLAB 0003-6951, 10.1063/1.1555708
- R. K. K. Chong, M. Yeadon, W. K. Choi, E. A. Stach, and C. B. Boothroyd, Appl. Phys. Lett. APPLAB 0003-6951, 82, 1833 (2003). 10.1063/1.1555708
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1833
- Chong, R.K.K.¹ Yeadon, M.² Choi, W.K.³ Stach, E.A.⁴ Boothroyd, C.B.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.