Epitaxial growth of CoSi2 on Si using a CoNx interlayer deposited by reactive metallorganic chemical vapor deposition

Electrochemical and Solid-State Letters

Volumn 8, Issue 11, 2005, Pages

  Kim, Sun Il ^a   Lee, Seung Ryul ^a   Park, Jong Ho ^b   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION;

COBALT CARBONYL; CONX FILM; COSI2; EPITAXIAL LAYERS;

THIN FILMS;

EID: 27744507306     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2073675     Document Type: Article

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