SiC based pressure sensor for high-temperature environments

Proceedings of IEEE Sensors

Volumn , Issue , 2007, Pages 748-751

  Wieczorek, G ^a   Schellin, B ^a   Obermeier, E ^a   Fagnani, G ^b   Drera, L ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b Gefran SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; PRESSURE SENSORS; PRESSURE TRANSDUCERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TUNGSTEN;

BOTTOM PLATES; HIGH TEMPERATURES; MEMBRANE STRUCTURING; METALLIZATION; OVER PRESSURES; PIEZORESISTORS; PROCESSING TECHNIQUES; SAFETY FEATURES; SENSOR CHIPS; STEEL MEMBRANES;

SENSORS;

EID: 48349134384     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2007.4388508     Document Type: Conference Paper

References (2)

1. G. Wagner, D. Schulz, D. Siehe; "Vapour Phase Growth of Epitaxial Silicon Carbide Layers"; Progress of Crystal Growth and Characterization of Materials 47, p. 139-165, 2003
2. G. Wieczorek, H.-D. Ngo, E. Obermeier, G. Fagnani, K. M. Robb; "Micromachining of bulk SiC using dry etching and ultrasonic drilling"; EuroSensorsXX Proceedings, Vol. II, p. 372-373, 2006