On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior

IEEE Transactions on Power Electronics

Volumn 23, Issue 1, 2008, Pages 491-494

  Allard, Bruno ^a   Garrab, Hatem ^a   ben ben Salah, Tarek ^a   Morel, Herve ^a   Ammous, Kaiçar ^b   Besbes, Kamel ^b  

^a CNRS   (France)

^b Laboratoire de Microlectronique et Instrumentation   (Tunisia)

Author keywords

PiN diode

Indexed keywords

COMPUTER SIMULATION; DESIGN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING;

DOPING PROFILE MODEL; PIN DIODE;

DIODES;

EID: 38349017057     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.911882     Document Type: Article

References (7)

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