An analytical approach to Kirk effect modelling

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2000, Pages 311-314

  Karamarkovic J P ^a   Pesic T V ^a   Jankovic N D ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC INVERTERS; MATHEMATICAL MODELS; PARTICLE BEAM INJECTION;

KIRK EFFECT; QUASI NEUTRAL REGIONS (QNR);

BIPOLAR TRANSISTORS;

EID: 0034452644     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Periodical steady-state analysis of minority-carrier diffusion including momentum relaxation time
2. Transmission line equivalent circuit model of minority carrier transient current in quasi-neutral silicon layers including inductive effect
3. Transmission line model of arbitrarily doped base including all injection levels and Kirk effect
4. t) falloff at high current densities
5. SEDAN III - A generalized electronic material device analysis program
6. Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels