Thickness-dependent electronic properties and molecular orientation of diradical metal complex thin films grown on SiO2

Chemical Physics Letters

Volumn 487, Issue 1-3, 2010, Pages 67-70

  Hosokai, Takuya ^a,c   Mitsuo, Noritaka ^a   Noro, Shin ichiro ^b   Nakamura, Takayoshi ^b   Kera, Satoshi ^a   Sakamoto, Kazuyuki ^a   Ueno, Nobuo ^a  

^a CHIBA UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIRADICALS; ELECTRON-INJECTION BARRIER; METAL COMPLEX THIN FILMS; METASTABLE ATOM ELECTRON SPECTROSCOPY; MONOLAYER FILM; NICKEL COMPLEX; SMALL HOLE; THICKNESS DEPENDENCE;

ATOMIC SPECTROSCOPY; ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FILM PREPARATION; MAGNETIC FILMS; METAL COMPLEXES; MOLECULAR ORIENTATION; MONOLAYERS; NICKEL COMPOUNDS; SILICON COMPOUNDS; THIN FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

MULTILAYER FILMS;

EID: 76049119175     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2010.01.020     Document Type: Article

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