Thin film removal mechanisms in ns-laser processing of photovoltaic materials

Thin Solid Films

Volumn 518, Issue 10, 2010, Pages 2897-2904

  Bovatsek, J ^a   Tamhankar, A ^a   Patel, R S ^a   Bulgakova, N M ^b   Bonse, J ^c  

^a Spectra Physics Lasers Division   (United States)

^b KUTATELADZE INSTITUTE OF THERMOPHYSICS   (Russian Federation)

^c Newport Spectra Physics GmbH   (Germany)

Author keywords

Copper indium gallium diselenide; Damage threshold; Laser scribing; Laser matter interaction; Photovoltaics; Silicon; Solar cell; Thin films

Indexed keywords

COPPER INDIUM GALLIUM DISELENIDE; DAMAGE THRESHOLD; LASER-MATTER INTERACTION; LASER-MATTER INTERACTIONS; PHOTOVOLTAICS;

AMORPHOUS FILMS; BIOMECHANICS; COMPUTER SIMULATION; GALLIUM; INDIUM; LASERS; MECHANICAL PROPERTIES; MOLYBDENUM; MOLYBDENUM OXIDE; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOVOLTAIC EFFECTS; PULSED LASER APPLICATIONS; Q SWITCHED LASERS; SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; SOLID STATE LASERS; THIN FILMS; TIN; TITANIUM COMPOUNDS; ZINC; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 76049110843     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.135     Document Type: Article

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