Effects of annealing temperature on the electrical properties of Cr-substituted BiFeO3 thin films

Ferroelectrics

Volumn 350, Issue 1, 2007, Pages 118-123

  Kim, J K ^a   Kim, S S ^a   Park, M H ^a   Kim, J W ^a   Choi, E J ^a   Ha, T G ^a   Cho, H K ^a   Guo, R ^b   Bhalla, A S ^b  

^a Changwon National University   (South Korea)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Bismuth iron oxide; Chemical solution deposition; Ferroelectric properties; Leakage current

Indexed keywords

ANNEALING TEMPERATURES; APPLIED ELECTRIC FIELD; BISMUTH IRON OXIDE; CHEMICAL SOLUTION DEPOSITION; COATED FILMS; CR-DOPING; ELECTRICAL PROPERTY; FERROELECTRIC PROPERTIES; FERROELECTRIC PROPERTY; GRAIN SIZE; HYSTERESIS CHARACTERISTICS; LEAKAGE CURRENT DENSITYS; LOW-LEAKAGE CURRENT; NITROGEN ATMOSPHERES; REMANENT POLARIZATION; ROOM TEMPERATURE; SATURATED HYSTERESIS LOOPS; SI SUBSTRATES; TEMPERATURE RANGE; TIO;

ANNEALING; ATMOSPHERIC TEMPERATURE; BISMUTH; CHEMICALS; CHROMIUM; CRYSTALLOGRAPHY; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRICITY; HYSTERESIS; IRON OXIDES; LEAKAGE (FLUID); LEAKAGE CURRENTS; OXYGEN; OXYGEN VACANCIES; PLATINUM; SILICON COMPOUNDS; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 75949106440     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190701369974     Document Type: Conference Paper

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