Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1892-1894

  Li, B K ^a   Chen, K J ^a   Lau, K M ^a   Ge, W K ^a   Wang, J N ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ENHANCEMENT-MODE; FLUORINE IONS; FLUORINE PLASMA; HALL MEASUREMENTS; PERSISTENT PHOTOCONDUCTIVITY; PHYSICAL MECHANISM; PLASMA-INDUCED; TEMPERATURE DEPENDENT;

ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; FLUORINE; GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77951231376     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778459     Document Type: Conference Paper

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