Transport spectroscopy in single-electron tunneling transistors

Nanotechnology

Volumn 7, Issue 4, 1996, Pages 381-384

  Haug, R J ^b   Weis, J ^b   Blick, R H ^b   Von Klitzing, K ^b   Eberl, K ^b   Ploog, K ^a,b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTRONS;

CHARGING EFFECTS; EXCITED STATE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030361152     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/7/4/013     Document Type: Article

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