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Journal of Superconductivity and Novel Magnetism

Volumn 18, Issue 2, 2005, Pages 223-227

Charging and spin effects in triple dot artificial molecules

(5) Vidan, A a Westervelt, R M a Stopa, M b Hanson, M c Gossard, A C c

a HARVARD UNIVERSITY (United States)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c University of California at Santa Barbara (United States)

Author keywords

Coulomb blockade; Quantum dot; Rectification; Single electron tunneling

Indexed keywords

GATE VOLTAGE; QUANTUM DOT DEVICES; RECTIFICATION; SINGLE-ELECCTRON TUNNELING;

COULOMB BLOCKADE; ELECTRON TUNNELING; ELECTROSTATICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18744402478 PISSN: 15571939 EISSN: 15571947 Source Type: Journal
DOI: 10.1007/s10948-005-3373-8 Document Type: Article

Times cited : (24)

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