Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface

Journal of Crystal Growth

Volumn 305, Issue 1, 2007, Pages 26-29

  Vizzini, S ^a   Oughaddou, H ^a   Leandri C ^a   Lazarov, V K ^b   Kohn, A ^b   Nguyen, K ^a   Coudreau, C ^a   Biberian J P ^a   Ealet, B ^a   Lazzari, J L ^a   Arnaud d'Avitaya, F ^a   Aufray, B ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

A1. AES; A1. AFM; A1. EELS; A1. HR TEM; A1. Interfaces; A1. TEM; A2. Atomic layer deposition oxidation; A3. Molecular beam epitaxy; B1. Aluminum; B1. Oxides; B1. Silicon; B3. Heterojunctions semiconductor devices

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; FILM GROWTH; HYDROGEN; SILICON; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION OXIDATION; HETEROJUNCTIONS SEMICONDUCTOR DEVICES;

THIN FILMS;

EID: 34249879238     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.03.037     Document Type: Article

References (8)

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