N2 effect on GaAs etching at 150 mTorr capacitively-coupled Cl2/N2 plasma

Microelectronic Engineering

Volumn 87, Issue 4, 2010, Pages 548-552

  Park, Y H ^a   Kim, J K ^a   Lee, J H ^a   Joo, Y W ^a   Noh, H S ^a   Lee, J W ^a   Pearton, S J ^b  

^a Inje University   (South Korea)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Capacitively coupled plasma; Catalytic effect; Cl2 N2; GaAs; Reactive ion etching

Indexed keywords

CATALYTIC EFFECTS; CHLORINE ADSORPTION; CL2/N2; COUPLED PLASMA; ETCH MECHANISM; ETCH RATES; GAAS; GAAS ETCHING; HIGH PRESSURE; PEAK INTENSITY; PHOTORESIST MASK; PLASMA CHEMISTRIES; PLASMA CONDITIONS; SEM; SIMPLE MODEL; SYNERGETIC EFFECT;

ADSORPTION; CHLORINE; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; METAL ANALYSIS; OPTICAL EMISSION SPECTROSCOPY; PHOTORESISTS; PLASMA ETCHING; POSITIVE IONS; SEMICONDUCTING GALLIUM; SURFACE DISCHARGES; SURFACE PROPERTIES; SURFACE ROUGHNESS;

REACTIVE ION ETCHING;

EID: 75149119233     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.08.006     Document Type: Article

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