Hydrogen in dry etching processes

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 137-147

  Franz, G ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING DIAMONDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR PLASMAS; SILICA;

GALLIUM NITRIDE; GALLIUM PHOSPHIDE; ION BEAM ETCHING; SIGMUND THEORY;

HYDROGEN;

EID: 0030677477     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199701)159:1<137::AID-PSSA137>3.0.CO;2-Y     Document Type: Article

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