Chemically-assisted ion-beam etching of (AlGa)As/GaAs: Lattice damage and removal by in-situ Cl2 treatment

Microelectronic Engineering

Volumn 45, Issue 1, 1999, Pages 9-14

  Daleiden, J ^a,b   Kiefer, R ^a   Klussmann S ^a   Kunzer, M ^a   Manz, C ^a   Wailher, M ^a   Braunstein, J ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

(AlGa)As GaAs SQW structures; Chemically assisted ion beam etching (CAIBE); Dry etching; In situ Cl2 treatment; Lattice damage; Semiconductor

Indexed keywords

CHLORINE; DRY ETCHING; IN SITU PROCESSING; ION BEAM LITHOGRAPHY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

CHEMICALLY-ASSISTED ION-BEAM ETCHING (CAIBE); LATTICE DAMAGE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033075077     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00256-1     Document Type: Article

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