Deep dry etching of GaAs and GaSb using Cl2/Ar plasma discharges

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2393-2397

  Giehl, Alexander R ^a   Gumbel, Michael ^a   Kessler, Matthias ^a   Herhammer, Norbert ^a   Hoffmann, Goetz ^a   Fouckhardt, Henning ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ARGON; ATOMIC FORCE MICROSCOPY; CHLORINE; DRY ETCHING; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLUMINESCENCE; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SURFACE ROUGHNESS;

PLASMA DISCHARGES; SOFT MASKS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0942267564     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1623507     Document Type: Article

References (23)

1. C. Mermelstein, S. Simanowski, M. Mayer, R. Kiefer, J. Schmitz, M. Walther, and J. Wagner, Appl. Phys. Lett. 77, 1581 (2000).
2. A. N. Baranov, N. Bertru, Y. Cuminal, G. Boissier, C. Alibert, and A. Joullie, Appl. Phys. Lett. 71, 735 (1997).
3. R. E. Bartoli, W. W. Bewley, I. Vurgaftman, C. L. Felix, J. R. Meyer, and M. J. Yang, Appl. Phys. Lett. 76, 3164 (2000).
4. A. S. Lee and E. H. Li, Proc. SPIE 3944, 746 (2000).
5. C. C. Chen, H. C. Chen, C. H. Kuan, S. D. Lin, and C. P. Lee, Appl. Phys. Lett. 80, 2251 (2002).
6. A. R. Meikle, R. L. Bates, K. Ledingham, J. H. Marsh, K. Mathieson, V. O'Shea, and K. M. Smith, Nucl. Instrum. Methods Phys. Res. A 477, 198 (2002).
7. M. Walther et al., Proc. SPIE 3436, 348 (1998).
8. Y. Nagao, T. Hariu, and Y. Shibata, IEEE Trans. Electron Devices 28, 407 (1981).
9. D. R. Lide, Handbook of Chemistry and Physics, 75th ed. (Chemical Rubber Corp., Boca Raton, FL, 1995-1996).
10. D. Zurhelle, J. P. Schmidt, R. Hoffmann, D. Sander, and J. Muller, Proc. SPIE 2397, 666 (1995).
11. P. J. Pigram, P. Y. Timbrell, R. N. Lamb, M. G. Sceats, and A. L. Cox, Opt. Eng. (Bellingham) 33, 2594 (1994).
12. Y. W. Chen, B. S. Ooi, G. I. Ng, K. Radhakrishnan, and C. L. Tan, J. Vac. Sci. Technol. B 18, 2509 (2000).
13. C. W. Cheah, G. Karunasiri, L. S. Tan, and L. F. Zhou, Appl. Phys. Lett. 80, 145 (2002).
14. S. J. Pearton, U. K. Chakrabarti, A. Katz, A. P. Perley, W. S. Hobson, and M. Geva, Plasma Chem. Plasma Process. 11, 405 (1991).
15. T. Corman, P. Enoksson, and G. Stemme, J. Micromech. Microeng. 8, 84 (1998).
16. R. Dammel, Diazonaphthoquinone-Based Resists (SPIE, Bellingham, WA, 1993).
17. W. M. Moreau, Semiconductor Lithography (Plenum, New York, 1988).
18. T. Senga, Y. Matsumi, and M. Kawasaki, J. Vac. Sci. Technol. B 14, 3230 (1996).
19. S. J. Pearton, F. Ren, and C. R. Abernathy, Appl. Phys. Lett. 64, 1673 (1994).
20. A. R. Giehl, M. Kessler, A. Grosse, N. Herhammer, and H. Fouckhardt, J. Micromech. Microeng. 13, 238 (2003).
21. J. R. Mileham, J. W. Lee, E. S. Lambers, and S. J. Pearton, Semicond. Sci. Technol. 12, 338 (1997).
22. D. L. Flamm and V. M. Donnelly, Plasma Chem. Plasma Process. 1, 317 (1981).
23. V. M. Donnelly and D. L. Flamm, Solid State Technol. 24, 161 (1981).