Atom probe specimen preparation and 3D interfacial study of Ti-Al-N thin films

Surface and Coatings Technology

Volumn 204, Issue 11, 2010, Pages 1811-1816

  Rachbauer, R ^a   Massl, S ^a,b   Stergar, E ^a   Felfer, P ^a,c   Mayrhofer, P H ^a  

^a UNIVERSITY OF LEOBEN   (Austria)

^b ERICH SCHMID INSTITUTE OF MATERIALS SCIENCE   (Austria)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

3DAPT; Atom probe; Oxygen impurities; Thermal stability; Ti Al N; TiAlN

Indexed keywords

ALN; ANNEALED STATE; ANNEALING TEMPERATURES; AS-DEPOSITED STATE; ATOM PROBE; ATOM PROBE TOMOGRAPHY; DOPED SILICON; INTERFACIAL STUDY; LIFT-OUT TECHNIQUES; LOW-CARBON STEELS; MASS RESOLUTION; OXYGEN IMPURITY; POST DEPOSITION ANNEALING; RANDOM DISTRIBUTION; SUBSTRATE INTERFERENCE; SUBSTRATE-FREE; THERMAL STABILITY; THIN FILM MATERIAL; TI-AL-N;

ALUMINUM; ANNEALING; ATOMS; DEPOSITION; LOW CARBON STEEL; MARTENSITIC STAINLESS STEEL; OXYGEN; PROBES; SPECIMEN PREPARATION; THERMODYNAMIC STABILITY; THIN FILMS; THREE DIMENSIONAL; TITANIUM NITRIDE; TOMOGRAPHY;

FILM PREPARATION;

EID: 75049084217     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.11.020     Document Type: Article

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