UHV room temperature joining by the surface activated bonding method

Industrial Ceramics

Volumn 19, Issue 3, 1999, Pages 176-178

  Suga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ARGON; BOND STRENGTH (MATERIALS); BONDING; JOINING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

SURFACE ACTIVATED BONDING (SAB);

CERAMIC MATERIALS;

EID: 0033308433     PISSN: 11217588     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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2. F. Ohuchi, M. Kohyama, Electronic structure and chemical reactions metal-alumina and metal-aluminum nitride interfaces, J. Am. Ceram. Soc. 74 (1991) 1163-1687.
3. 4 interfaces bonded at room temperature by means of the surface activation method, Acta Metall. Mater., 40 (1992) S59-S66.
4. T. Suga, Y. Takahashi, H. Takagi, Surface activated bonding -An approach to joining at room temperature, Ceram. Trans., 35 (1993) 323-331.
5. U. Gsele, H. Stenzel, T. Martini, J. Steinkirchner, JD. Conrad, K. Scheerschmidt, Self-propagating room temperature silicon wafer bonding in ultrahigh vacuum, Appl. Phys. Lett., 67 (1995) 3614-3616.
6. H. Takagi, K. Kikuchi, R. Maeda, T.R. Chung, T. Suga, Surface activated bonding of silicon wafers at room temperature, Appl. Hpys. Lett., 68 (1996) 2222-2224.
7. K. Saijo, Toyo-kohan Co., Communication.