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Volumn 11, Issue 8, 1999, Pages 937-939

Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC CURRENT MEASUREMENT; INTERFACES (MATERIALS); LASER RESONATORS; OXIDATION; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032657389     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.775305     Document Type: Article
Times cited : (9)

References (13)
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    • Ultralow threshold current vertical cavity surface-emitting laser obtained with selective oxidation
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  • 4
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    • Oxide-confined 850 nm vertical-cavity lasers for multimode-fiber data communications
    • R. P. Schneider, Jr., M. R. T. Tan, S. W. Corzine, and S. Y. Wang, "Oxide-confined 850 nm vertical-cavity lasers for multimode-fiber data communications," Electron. Lett., vol. 32, pp. 1300-1302, 1996.
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  • 10
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    • Short wavelength bottom-emitting vertical cavity lasers fabricated using wafer bonding
    • K. D. Choquette, K. M. Geib, B. Roberds, H. Q. Hou, R. D. Twesten, and B. E. Hammons, "Short wavelength bottom-emitting vertical cavity lasers fabricated using wafer bonding," Electron. Lett., vol. 34, pp. 1404-1405, 1998.
    • (1998) Electron. Lett. , vol.34 , pp. 1404-1405
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.