High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 151-154

  Miyake, H ^a   Yasukawa, H ^a   Kida, Y ^a   Ohta, K ^a   Shibata, Y ^a   Motogaito, A ^a   Hiramatsu, K ^a   Ohuchi, Y ^b   Tadatomo, K ^b   Hamamura, Y ^c   Fukui, K ^d  

^a MIE UNIVERSITY   (Japan)

^b Mitsubishi Cable Industries Ltd   (Japan)

^c NIKON CORPORATION   (Japan)

^d UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SPECTRUM ANALYSIS; TENSILE STRESS;

BAND GAP; RESPOSIVITY SPECTRUM; SCHOTKKY ULTRAVIOLET DETECTORS;

PHOTODETECTORS;

EID: 0347516442     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303487     Document Type: Article

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