Microstructural properties and initial growth behavior of InN nanobats grown on a Si(1 1 1) substrate

Journal of Crystal Growth

Volumn 312, Issue 5, 2010, Pages 662-666

  Kim, Y H ^a   Yun, W S ^a   Ruh, H ^a   Kim, C S ^a   Kim, J W ^a   Shin, Y H ^b   Kim, M D ^b   Oh, J E ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungnam National University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

A1. Interfaces; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

3-DIMENSIONAL; A1. INTERFACES; A1. NANOSTRUCTURES; A3. MOLECULAR BEAM EPITAXY; ALN; DECISION PROCESS; GAN NANOISLANDS; GROWTH BEHAVIOR; INITIAL STAGES; LATERAL EXPANSION; MICROSTRUCTURAL PROPERTIES; NANO-ISLANDS; NANOSTRUCTURAL; NUCLEATION PROCESS; SI (1 1 1);

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MAMMALS; MOLECULAR BEAM EPITAXY; NANORODS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; THREE DIMENSIONAL;

MOLECULAR BEAMS;

EID: 74549125553     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.026     Document Type: Article

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