|
|
Volumn 87, Issue 3, 2010, Pages 443-446
|
|
Thin titanium oxide films deposited by e-beam evaporation with additional rapid thermal oxidation and annealing for ISFET applications
|
|
Author keywords
High k; ISFET; Titanium oxide
|
|
Indexed keywords
ANNEALING TEMPERATURES;
BIAS CURVE;
CRYSTALLINE PHASE;
E BEAM EVAPORATION;
EARLY VOLTAGE;
ELECTRICAL CHARACTERISTIC;
FORMING GAS;
GRAIN SIZE;
HIGH DIELECTRIC CONSTANTS;
HIGH-K;
HUMAN CELLS;
INTERFACE CHARGE;
MEDICAL AREAS;
OXYGEN CONCENTRATIONS;
RAPID THERMAL OXIDATION;
RUTILE PHASE;
STRUCTURAL CHARACTERIZATION;
TIO;
TITANIUM FILM;
TITANIUM OXIDE THIN FILMS;
X-RAY ABSORPTION NEAR-EDGE STRUCTURE;
ABSORPTION SPECTROSCOPY;
ANNEALING;
ATOMIC FORCE MICROSCOPY;
ATOMIC SPECTROSCOPY;
BIOCOMPATIBILITY;
CRYSTAL ATOMIC STRUCTURE;
CRYSTALLINE MATERIALS;
FIELD EFFECT TRANSISTORS;
FILM THICKNESS;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
GAS ABSORPTION;
ION SENSITIVE FIELD EFFECT TRANSISTORS;
OXIDATION;
OXIDE MINERALS;
OXYGEN;
PHASE INTERFACES;
RAMAN SPECTROSCOPY;
REFRACTIVE INDEX;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON OXIDES;
SILICON WAFERS;
THERMAL EVAPORATION;
THIN FILMS;
TITANIUM;
TITANIUM DIOXIDE;
TITANIUM OXIDES;
VAPORS;
X RAY ANALYSIS;
OXIDE FILMS;
|
|
EID: 74449084917
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2009.06.020 Document Type: Article |
|
Times cited : (46)
|
|
References (14)
|
