Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2783-2786

  Yu, Tongjun ^a   Li, Zilan ^a   Qin, Z X ^a   Chen, Z Z ^a   Yang, Z J ^a   Hu, X D ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PIEZOELECTRIC MATERIALS; RAMAN SCATTERING; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EXPANSION;

LASER LIFT-OFF; PULSE EXCIMER LASER; RED-SHIFT; STRAIN EFFECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 7444253863     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405024     Document Type: Conference Paper

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