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Volumn 81, Issue 1, 2003, Pages 99-103

Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off

(6) Ho, H P a Lo, K C b Siu, G G b Surya, C c Li, K F d Cheah, K W d

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

c HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

d HONG KONG BAPTIST UNIVERSITY (Hong Kong)

Author keywords

Free carriers absorption; Gallium nitride (GaN); Laser lift off; Photoluminescence; Raman

Indexed keywords

COOLING; ENERGY GAP; FILM GROWTH; HEATING; NEODYMIUM LASERS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; PHOTONS; RAMAN SPECTROSCOPY; SAPPHIRE; SILICON WAFERS; THIN FILMS;

FREE CARRIERS;

GALLIUM NITRIDE;

EID: 0037701679 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(03)00146-9 Document Type: Article

Times cited : (20)

References (13)

1
- 0008362603
- Lei T., Fanciulli M., Molner R.J., Moustakas T.D., Graham R.J., Scanlon J. Appl. Phys. Lett. 59:1991;944.
- (1991) Appl. Phys. Lett. , vol.59 , pp. 944
- Lei, T.¹ Fanciulli, M.² Molner, R.J.³ Moustakas, T.D.⁴ Graham, R.J.⁵ Scanlon, J.⁶

2
- 0004515082
- Stevens K.S., Ohtani A., Schwartmann A.F., Beresford R. J. Vac. Sci. Technol. B. 12:1994;1186.
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 1186
- Stevens, K.S.¹ Ohtani, A.² Schwartmann, A.F.³ Beresford, R.⁴

3
- 0000223380
- Kelly M.K., Ambacher O., Dahlheimer B., Groos G., Dimitrov R., Angerer H., Stutzmann M. Appl. Phys. Lett. 69:1996;1749.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1749
- Kelly, M.K.¹ Ambacher, O.² Dahlheimer, B.³ Groos, G.⁴ Dimitrov, R.⁵ Angerer, H.⁶ Stutzmann, M.⁷

4
- 0000274548
- Wong W.S., Sands T., Cheung N.W. Appl. Phys. Lett. 72:1998;599.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 599
- Wong, W.S.¹ Sands, T.² Cheung, N.W.³

5
- 0032606210
- Wong W.S., Cho Y., Weber E.R., Sands T., Yu K.M., Kruger J., Wengrow A.B., Cheung N.W. Appl. Phys. Lett. 75:1999;1887.
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1887
- Wong, W.S.¹ Cho, Y.² Weber, E.R.³ Sands, T.⁴ Yu, K.M.⁵ Kruger, J.⁶ Wengrow, A.B.⁷ Cheung, N.W.⁸

6
- 0033280188
- Wong W.S., Wengrow A.B., Cho Y., Salleo A., Quitoriano N.J., Cheung N.W., Sands T. J. Electron. Mater. 28:1999;1409.
- (1999) J. Electron. Mater. , vol.28 , pp. 1409
- Wong, W.S.¹ Wengrow, A.B.² Cho, Y.³ Salleo, A.⁴ Quitoriano, N.J.⁵ Cheung, N.W.⁶ Sands, T.⁷

7
- 0029746387
- Semendy F., Bambha N., Kim J.G., Liu H., Park R.M. Mater. Res. Soc. Symp. Proc. 395:1996;547.
- (1996) Mater. Res. Soc. Symp. Proc. , vol.395 , pp. 547
- Semendy, F.¹ Bambha, N.² Kim, J.G.³ Liu, H.⁴ Park, R.M.⁵

8
- 0004115497
- Springer, Berlin
- C. Bauerle, Laser Processing and Chemistry, Springer, Berlin, 1995, pp. 120-122.
- (1995) Laser Processing and Chemistry , pp. 120-122
- Bauerle, C.¹

9
- 0003428292
- Springer, Berlin
- M. von Allmen, A. Blatter, Laser-Beam Interactions with Materials: Physical Principles and Applications, Springer, Berlin, 1995, p. 22.
- (1995) Laser-Beam Interactions with Materials: Physical Principles and Applications , pp. 22
- Von Allmen, M.¹ Blatter, A.²

10
- 0038384854
- Bulbul M.M., Smith S.R.P., Obradovic B., Cheng T.S., Foxon C.T. Eur. Phys. J. B. 14:2000;423.
- (2000) Eur. Phys. J. B , vol.14 , pp. 423
- Bulbul, M.M.¹ Smith, S.R.P.² Obradovic, B.³ Cheng, T.S.⁴ Foxon, C.T.⁵

11
- 0035398172
- Qu B., Zheng X.H., Wang Y.T., Xu D.P., Lin S.M., Hui Y., Liang J.W. J. Cryst. Growth. 227/228:2001;399.
- (2001) J. Cryst. Growth , vol.227-228 , pp. 399
- Qu, B.¹ Zheng, X.H.² Wang, Y.T.³ Xu, D.P.⁴ Lin, S.M.⁵ Hui, Y.⁶ Liang, J.W.⁷

12
- 0034224632
- Kimura R., Takahashi K. Phys. Stat. Sol. A. 180:2000;235.
- (2000) Phys. Stat. Sol. A , vol.180 , pp. 235
- Kimura, R.¹ Takahashi, K.²

13
- 0032641863
- Chen H., Liu H.F., Li Z.Q., Liu S., Huang Q., Zhou J.M., Wang Y.Q. J. Cryst. Growth. 201-202:1999;336.
- (1999) J. Cryst. Growth , vol.201-202 , pp. 336
- Chen, H.¹ Liu, H.F.² Li, Z.Q.³ Liu, S.⁴ Huang, Q.⁵ Zhou, J.M.⁶ Wang, Y.Q.⁷

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