High-frequency dielectric study of multiferroic Bi0.9La 0.1Fe0.9Mn0.1O3 thin films

IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 2009, Pages

  Sobiestianskas, R ^a   Vengalis, B ^b   Banys, J ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; DIELECTRIC CONSTANT VALUES; FREQUENCY DEPENDENCE; FREQUENCY RANGES; HIGH-FREQUENCY DIELECTRICS; LOSS TANGENT; LOW LOSS; MICROWAVE LOSS; MN-DOPED; MULTIFERROICS; PARALLEL PLATE CAPACITORS; POWER LAW; RF-SPUTTERING; ROOM TEMPERATURE; SINGLE PHASE; SRTIO;

MANGANESE; MANGANESE COMPOUNDS; MICROWAVES; OXYGEN; OXYGEN VACANCIES;

EPITAXIAL FILMS;

EID: 74349121357     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISAF.2009.5307574     Document Type: Conference Paper

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