Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 604, Issue 1-2, 2009, Pages 258-261

  Rafi J M ^a   Boulord, C ^a   Hayama, K ^b   Ohyama, H ^b   Campabadal, F ^a   Pellegrini, G ^a   Lozano, M ^a   Simoen, E ^c   Claeys, C ^c,d  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Carrier lifetime; Diffusion oxygenated FZ; Electron irradiation; Float zone; High resistivity silicon; Magnetic Czochralski

Indexed keywords

A-THERMAL; BULK DAMAGES; CARRIER LIFETIME PROPERTIES; DIFFERENT SUBSTRATES; ELECTRICAL PROPERTY; EXPERIMENTAL CONDITIONS; FLOAT ZONE; FLOAT ZONES; FLUENCE; FLUENCES; HIGH RESISTIVITY SILICON; HIGH-ENERGY ELECTRON; MAGNETIC CZOCHRALSKI; MAGNETIC CZOCHRALSKI SILICON; OXYGEN CONTENT; RADIATION HARDNESS; SILICON DIODES; TRACKING DETECTORS;

CARRIER CONCENTRATION; CARRIER LIFETIME; DEGRADATION; DIODES; ELECTRIC PROPERTIES; ELECTRONS; HIGH ENERGY PHYSICS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON DETECTORS;

ELECTRON IRRADIATION;

EID: 65749109564     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.01.114     Document Type: Article

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